用於合成MoS2二硫化鉬(和其他TMD材料)的CVD系統

MoS2二硫化鉬CVD系統

用於合成MoS2(和其他TMD材料)的planarGROW高溫CVD系統是一水平式爐管加熱反應器，與石墨烯的合成不同的是，MoS2乃是以固體源(通常是硫粉和MoO3粉末)作為前驅物，可以直接沉積到 SiO2等目標基材上。 planarTECH提供標準的2吋CVD系統 (planarGROW-2S-MoS2)，亦可依客戶的特定應用要求進行客製化。

規格與說明

planarGROW-2S-MoS2 CVD系統規格

QUARTZ TUBE & FURNACE

Quartz Tube Dimensions: ф50(OD)*1000 mm

Water Jacket Vacuum Plugs with Viton O-rings

Heating Element: Kanthal Wire, Glass Wool Molding

Maximum Temp: 1,000°C, K-type Thermocouple

Heating Zone: 2-zones, ф50*300mm Each

Alumina Tray + Wafer Tray for 10x10mm2 Samples

GAS SUPPLY UNIT

One (1) Celerity TN2900 Mass Flow Controller
- Argon (Ar): 1,000sccm

Open Mounting Bay for Second (2nd) MFC

¼” Stainless Steel Tubing

Two (2) ¼” Pneumatic-Type Diaphragm Valves

VACUUM & PRESSURE CONTROL UNIT

Atovac CG201 Convection Gauge

Atovac CG2000 Vacuum Gauge & Controller

GPC3000 Pressure & Flow Controller

Alcatel Dry Pump (400 liter/m) w/ Cold Trap

SYSTEM CONTROL UNIT

MS Windows XP Pro Embedded PC
- Intel 3.0Ghz Core2Duo, 2GB Memory

PLC Module with National Inst. LabVIEW Interface

Samsung E1920R 19” LCD Monitor

SAFETY & COOLING

Water Cooled End Flanges

Buzzer Alarm & System Error Display

Interlock System

DIMENSIONS & UTILITY REQUIREMENTS

Footprint: 1.5m (W) x 1.50m (H) x 0.80m (D)

Weight: ~200kg

Power: 220V, 50/60Hz, 3Φ, 4-wire, 30A

Air: 4-5kgf/cm2, ¼” tube

Water: 2-3kgf/cm2, ½” tube

planarGROW-2B-MoS2 with Touch Screen

Fully Automated PC Control with LabVIEW Front End

planarGROW-2S/2S (side-by-side dual tube system for TMD growth)

化學氣相沉積法 MoS2 planarTECH CVD 二維材料 TMD 水平式二硫化鉬後退火處理 MoSe2 WS2 WSe2 Bi2O2Se 薄膜 2D material

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MoS2二硫化鉬CVD系統